2 edition of Laser enhanced semiconductor reflectivity for germanium. found in the catalog.
Laser enhanced semiconductor reflectivity for germanium.
Petar Cyriakus Hein
Written in English
Thesis (M.Sc), Dept. of Physics, University of Toronto
|Contributions||Van Driel, Henry (supervisor)|
|The Physical Object|
|Number of Pages||95|
A reflection-high-energy σ Ge is much enhanced at the heterojunction, leading to the observed MIM contrast. To the best our knowledge, this is the first demonstration of carrier density. SEMICONDUCTOR DETECTORS: Germanium on silicon approaches III-V semiconductors in performance. Silicon photonics has been getting increased attention in the press as companies and universities report on advances that appear to be opening the door for widespread use of this technology in optical communications.
a The complex dielectric function of a heavily doped germanium film extracted from b, the reflectivity spectrum.c A scanning electron micrograph of a single germanium . Therefore, the efficiency of solar modules could be enhanced to the infrared range. Nevertheless, Ge-diodes are very sensitive for temperatures above .
Several semiconductor materials such as Germanium, Zinc solenoid, Cadmium telluride and gallium arsenide have been found to work well in the infrared range. These materials offer’s low absorption at micron wavelengths but are relatively expansive. Furthermore the germanium does not transmit visible light, which makes laser alignment. Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure. GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass. Applied Physics Letters , Tin and germanium monochalcogenide IV–VI semiconductor nanocrystals for use in solar cells.
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Reflectivity enhancement of single‐crystal silicon, germanium, gallium arsenide, and indium antimonide and polycrystalline boron and cadmium Laser enhanced semiconductor reflectivity for germanium.
book was observed. The reflectivity variations were produced by irradiating the semiconductor with the output of a Q‐switched ruby laser ( Å) with pulses of 30 and 10 by: A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects.
In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic by: THE GENERATION of high-density carriers in a semiconductor using high-intensity lasers is known to lead to substantial changes in the semiconductor's optical properties [ In particular, experiments using germanium have demonstrated transient shifts in the plasma reflectivity edge to wavelengths below Am which occur for densities in excess of cmCited by: 2.
High-density carriers were produced in germanium using the fundamental ( μm) and second harmonic ( μm) output of a Q-switched glass:Nd 3+ laser. Differences in the plasma reflectivity at μm are attributed to different amounts of lattice by: 2.
Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band Cited by: 6. The wavelength of UV light is selected to correspond to the absorption band of germanium-related glass defects.
Generally, a KrF excimer laser ( nm) or an SHG A r laser ( nm) is used as a UV light source. Photosensitivity can be enhanced by increasing the germanium. Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of eV.
On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon, with a gap of eV, and therefore deterministic preparation of single MoS2 layers is a crucial step toward exploiting the large direct bandgap of monolayer.
Chapter 4 Fundamentals of Laser-Material Interaction and Application to Multiscale Surface Modiﬁcation Matthew S. Brown and Craig B. Arnold Abstract Lasers provide the ability to accurately deliver large amounts of energy into conﬁned regions of a material in order to achieve a desired response.
OPTICAL AND PHYSICAL PROPERTIES OF MATERIALS m i ionic mass m 9 i reduced ionic mass m i m p impurity ion mass m * l longitudinal ef fective mass m o electron rest mass m r electron-hole reduced mass m * t transverse ef fective mass N volume density n refractive index (real part) n ˜ 5 (n 1 ik) complex index of refraction P polarization ﬁeld q photon wave vector.
operation of semiconductor lasers. Laser Output Power: We also need expressions for the light coming out of the laser. Photons leave the cavity in two ways; they can either escape from the end facets (or mirrors) or they can get absorbed by the cavity. Only the photons that leave the cavity from the mirrors constitute useful output.
Optoelectronic-grade germanium and silicon-germanium alloys. Silicon used for electronics has a cubic crystal lattice, which makes the material unsuitable for photonics applications. Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.
Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. We propose a new class of optoelectronic devices in which the optical properties of the active material is enhanced by strain generated from micromechanical structures.
As a concrete example, we modeled the emission efficiency of strained germanium supported by a cantilever-like platform.
Our simulations indicate that net optical gain is obtainable even in indirect germanium under a substrate. Group IV semiconductors as silicon(Si) or germanium(Ge) are classical text book candidates for indirect semiconductors.
Recent Ge based laser work 1,2 prove d that an indirect semiconductor with a. The germanium samples turn completely black after laser processing, i.e.
they exhibit greatly reduced reflectivity throughout the visible spectrum. View Show abstract. JOHN C. MORRISON, in Modern Physics, Light-emitting diodes and semiconductor lasers typically have gratings or etched ridges in which light is reflected or transmitted many times at the interface between different materials.
The amplitudes of light at the interface of two semiconductors with indices of refraction, n 1 and n 2, the chapter derives expression for the transmission and.
Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. Terahertz cavity-enhanced attenuated total reflection spectroscopy Appl.
Phys. Lett. 86, ( The beryllium-doped germanium laser crystal was made available by E. Haller and his group at the Lawrence Berkeley National Laboratory, USA. in Long-Wavelength Infrared Semiconductor Lasers, edited by H. Choi. The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device.
Two semiconductor lasers ( and nm) are used at. Germanium is now laser compatible Date: Ap Source: ETH Zurich Summary: Good news for the computer industry: a team of researchers has managed to make germanium suitable for lasers.
Lasers with record performances based on these materials were demonstrated, such as QCLs operating in the cw regime at RT above 15 μm—the longest RT cw emission wavelength of semiconductor lasers (Baranov et al., ), and pulsed QCLs operating above RT at 20 μm—the longest emission wavelength of semiconductor lasers at RT (Bahriz et al.Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.
Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.5.
In a P-type germanium, n i = × 10 19 m –3 density of boran × 10 23 atoms /m 3. The electron and hole mobility are and m 2 v –1 s –1 respectively.
What is its conductivity before and after addition of boron atoms. 6. An N-type semiconductor has hall coefficient = × 10 –4 m 3 C –1.
The conductivity is –1.